Journal Publications

1. Design and performance consideration of novel 4H-SiC MESFET with a p-type pillar for increasing breakdown voltage.
   Hamid Amini Moghadam and Ali A. Orouji.
   Physica E: Low-dimensional Systems and Nanostructures. (2011).
   
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   Bibtex entry:
   

   @article{3966, abstract={}, author={Hamid Amini Moghadam and Ali A. Orouji}, booktitle={}, doi={}, journal={Physica E: Low-dimensional Systems and Nanostructures}, note={}, title={Design and performance consideration of novel 4H-SiC MESFET with a p-type pillar for increasing breakdown voltage}, url={http://www.sciencedirect.com/science/article/pii/S138694771100213X}, year=2011, }
2. A New Partial SOI LDMOSFET with Modified Buried Oxide Layer for Improving Self Heating and Breakdown Voltage.
   S. E. Jamali Mahabadi, Ali A. Orouji, P. Keshavarzi and Hamid Amini Moghadam.
   Semiconductor Science and technology. (2011).
   
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   Bibtex entry:
   

   @article{9699, abstract={}, author={S. E. Jamali Mahabadi and Ali A. Orouji and P. Keshavarzi and Hamid Amini Moghadam}, booktitle={}, doi={}, journal={Semiconductor Science and technology}, note={}, title={A New Partial SOI LDMOSFET with Modified Buried Oxide Layer for Improving Self Heating and Breakdown Voltage}, url={http://iopscience.iop.org/0268-1242/26/9/095005/}, year=2011, }
3. Double window partial SOI-LDMOSFET: A novel device for breakdown voltage improvement.
   Ali A. Orouji, Hamid Amini Moghadam and A. Dideban.
   Physica E: Low-dimensional Systems and Nanostructures. (2010).
   
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   Bibtex entry:
   

   @article{13287, abstract={}, author={Ali A. Orouji and Hamid Amini Moghadam and A. Dideban}, booktitle={}, doi={}, journal={Physica E: Low-dimensional Systems and Nanostructures}, note={}, title={Double window partial SOI-LDMOSFET: A novel device for breakdown voltage improvement}, url={http://www.sciencedirect.com/science/article/pii/S1386947710005618}, year=2010, }

Conference Publications

1. Comparative study of buried insulator materials in LDMOSFETs.
   Hamid Amini Moghadam, Ali A. Orouji and A. Dideban.
   IEEE international Conference Sibircon. (2010).
   
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   Bibtex entry:
   

   @conference{868, abstract={}, author={Hamid Amini Moghadam and Ali A. Orouji and A. Dideban}, booktitle={IEEE international Conference Sibircon}, doi={}, journal={}, note={}, title={Comparative study of buried insulator materials in LDMOSFETs}, url={http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=5555119}, year=2010, }
2. A new method for improving breakdown voltage in PSOI MOSFETs using variable drift region doping concentration.
   S. E. J. Mahabadi, Ali A. Orouji, Hamid Amini Moghadam, and P. Keshavarzi.
   IEEE International Conference on Computer Science and Automation Engineering (CSAE), 2011 . ().
   
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   Abstract:
   In this paper for the first time, a novel partial SOI LDMOS with variable drift region doping concentration (VDRDC-PSOI) has been proposed. The introduced doping regions in the partial buried oxide enhance peaks of the electric field to achieve maximum breakdown voltage. We demonstrate that the electric field is modified by producing two additional peaks of electric field. These peaks decrease the common peaks near the drain and gate junctions. Hence, a more uniform electric field is obtained. The two-dimensional numerical analysis is performed to investigate the breakdown characteristics of VDRDC-PSOI structure. 2-D numerical simulation results show that breakdown voltage (BV) for proposed structure is increased by 127% in comparison with C-PSOI structure. The PSOI devices with variable doping region concentration overcome the disadvantages of the conventional PSOI (C-PSOI) devices and are shown to keep better balance between the self-heating effects (SHE) and the breakdown voltage which can be optimized at the same time. Simulations results show that the maximum temperatures of the VDRDC-PSOI and C-PSOI structures are 441 and 500?K at VDS = 40 V. The substrate temperature and gate-source voltage are chosen 300?K and 10 V, respectively. Furthermore, the drive current is improved. The current of the VDRDC-PSOI and C-PSOI structures are 108 μA and 88 μA, respectively for a drain-source voltage VDS = 20V.

   Bibtex entry:
   

   @conference{6982, abstract={In this paper for the first time, a novel partial SOI LDMOS with variable drift region doping concentration (VDRDC-PSOI) has been proposed. The introduced doping regions in the partial buried oxide enhance peaks of the electric field to achieve maximum breakdown voltage. We demonstrate that the electric field is modified by producing two additional peaks of electric field. These peaks decrease the common peaks near the drain and gate junctions. Hence, a more uniform electric field is obtained. The two-dimensional numerical analysis is performed to investigate the breakdown characteristics of VDRDC-PSOI structure. 2-D numerical simulation results show that breakdown voltage (BV) for proposed structure is increased by 127% in comparison with C-PSOI structure. The PSOI devices with variable doping region concentration overcome the disadvantages of the conventional PSOI (C-PSOI) devices and are shown to keep better balance between the self-heating effects (SHE) and the breakdown voltage which can be optimized at the same time. Simulations results show that the maximum temperatures of the VDRDC-PSOI and C-PSOI structures are 441 and 500?K at VDS = 40 V. The substrate temperature and gate-source voltage are chosen 300?K and 10 V, respectively. Furthermore, the drive current is improved. The current of the VDRDC-PSOI and C-PSOI structures are 108 μA and 88 μA, respectively for a drain-source voltage VDS = 20V.}, author={ S. E. J. Mahabadi, Ali A. Orouji, Hamid Amini Moghadam, and P. Keshavarzi}, booktitle={ IEEE International Conference on Computer Science and Automation Engineering (CSAE), 2011 }, doi={}, journal={}, note={}, title={A new method for improving breakdown voltage in PSOI MOSFETs using variable drift region doping concentration}, url={}, year={}, }

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